The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3688219
Reference21 articles.
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3. The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation;Microelectronics Reliability;2020-12
4. Analytical modeling of 2DEG and 2DHG charge balancing in quaternary $$\hbox {Al}_{0.42}\hbox {In}_{0.03}\hbox {Ga}_{0.55}\hbox {N/Al}_{0.3}\hbox {In}_{0.7}\hbox {N}$$Al0.42In0.03Ga0.55N/Al0.3In0.7N HEMTs;Journal of Computational Electronics;2018-04-13
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