Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3679150
Reference26 articles.
1. Light-Emitting Diodes
2. Enhanced Light Extraction From Triangular GaN-Based Light-Emitting Diodes
3. Design of Gallium Nitride Resonant Cavity Light-Emitting Diodes on Si Substrates
4. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of thep-GaN surface
5. Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN
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