Schottky barrier height modification onn‐ andp‐type GaInP with thin interfacial Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357903
Reference16 articles.
1. Wide range of Schottky barrier height for metal contacts to GaAs controlled by Si interface layers
2. Unpinned GaAs Schottky barriers with an epitaxial silicon layer
3. Unpinned GaAs Schottky barriers with an epitaxial silicon layer
4. Al/Si/AlGaAs/GaAs Schottky barriers by molecular beam epitaxy
5. Unpinning the GaAs Fermi level with thin heavily doped silicon overlayers
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2. Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range;Journal of Applied Physics;2011-03
3. DC and RF characteristics of E-mode Ga/sub 0.51/In/sub 0.49/P-In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs;IEEE Electron Device Letters;2003-03
4. Ga0.51In0.49P/InxGa1−xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy;Journal of Applied Physics;1999-02-15
5. Single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs for power application;IEEE Electron Device Letters;1999-01
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