Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1527974
Reference22 articles.
1. Silicon carbide: synthesis and processing
2. Cavity formation and impurity gettering in He-implanted Si
3. Gettering of metals by voids in silicon
4. High-dose oxygen ion implantation into 6H-SiC
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