X-ray phase-amplitude contrast mapping of single-crystal alloys near the absorption edge of the alloy impurity
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368723
Reference14 articles.
1. Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves
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4. Model-independent determination of the strain distribution for aSi0.9Ge0.1/Si superlattice using x-ray diffractometry data
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1. High spatial resolution mapping of partially strain-compensated SiGe:C films in the presence of postannealed defects;Journal of Applied Physics;2006-06
2. X-ray Bragg diffraction profiles from unstrained layered single-crystal structures: theoretical considerations, simulation and reconstruction using phase-retrieval X-ray diffractometry;Thin Solid Films;2004-11
3. Fast nondestructive technique to determine the content of components in a strain-compensated crystalline ternary alloy;Journal of Applied Physics;2004-05
4. Application of the Phase-Retrieval X-Ray Diffractometry to an Ultra-High Spatial Resolution Mapping of SiGe Films near the Absorption Edge of Ge;physica status solidi (a);2001-03
5. Phase retrieval x-ray diffractometry (PRXRD): refraction/small-angle scattering data applications;Advances in X-Ray Optics;2001-01-05
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