Characteristics and polarization-enhanced model of wurtzite aluminum nitride thin films synthesized on Si(100) substrates by pulsed laser deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1592008
Reference29 articles.
1. Reliability considerations of III-nitride microelectronic devices
2. Recent progress in group-III nitride light-emitting diodes
3. Structural and electrical characterization of AIN thin films obtained by nitridation of Al/Si substrate
4. Morphology and orientation of nanocrystalline AlN thin films
5. Growth and characterization of GaN and AlN films on (111) and (001) Si substrates
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1. Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices;Surface Science Reports;2015-11
2. Structural characteristics of Ni+-implanted AlN thin film;Surface Topography: Metrology and Properties;2014-09-23
3. Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy;EPJ Web of Conferences;2013
4. The preparation and characterization of preferred (110) orientation aluminum nitride thin films on Si (100) substrates by pulsed laser deposition;Vacuum;2010-08
5. Pulsed laser deposition of aluminum nitride thin films for FBAR applications;Applied Surface Science;2007-07
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