Temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1522833
Reference10 articles.
1. Domain wall motion and its contribution to the dielectric and piezoelectric properties of lead zirconate titanate films
2. Evidence of domain wall contribution to the dielectric permittivity in PZT thin films at sub-switching fields
3. Domain wall pinning contribution to the nonlinear dielectric permittivity in Pb(Zr, Ti)O3 thin films
4. Reversible and irreversible domain wall contributions to the polarization in ferroelectric thin films
5. Preparation of highly (1 0 0)-oriented metallic LaNiO3 films on Si substrates by a modified metalorganic decomposition technique
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