Observation of reflection high energy electron diffraction intensity oscillations during Si molecular beam epitaxial growth from disilane
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107046
Reference13 articles.
1. Gas source Si-MBE
2. Thermal and photostimulated reactions on Si2H6-adsorbed Si(100)2×1 surfaces: Mechanisms of Si film growth by atomic-layer epitaxy
3. Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1
4. Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfaces
5. Gas Source Silicon Molecular Beam Epitaxy
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1. Silicon deposition from disilane on Si(100)-2×1: Microscopic model including adsorption;Journal of Applied Physics;2001-11-15
2. Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy:In situobservations and detailed modeling of the growth;Applied Physics Letters;2001-08-06
3. The interaction of silanes with silicon single crystal surfaces: microscopic processes and structures;Surface Science Reports;2001-05
4. The Growth of Homo-Epitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition;MRS Proceedings;1999
5. Low temperature epitaxial growth of Si on Si(111) by gas-source MBE with heat-pulse annealing;Thin Solid Films;1998-12
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