Mechanism of low temperature C54 TiSi2 formation bypassing C49 TiSi2: Effect of Si microstructure and Mo impurities on the Ti–Si reaction path
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122032
Reference9 articles.
1. Silicides for integrated circuits: TiSi2 CoSi2
2. Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/
3. Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines
4. Phase formation in the interfacial reactions of ultrahigh vacuum deposited titanium thin films on (111)Si
5. Microstructural aspects and mechanism of theC49‐to‐C54 polymorphic transformation in titanium disilicide
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