Physical and electrical characterizations of ultrathin Si-rich Hf-silicate film and Hf-silicate/SiO2 bilayer deposited by atomic layer chemical vapor deposition-Reference-Cited by-同舟云学术

Physical and electrical characterizations of ultrathin Si-rich Hf-silicate film and Hf-silicate/SiO2 bilayer deposited by atomic layer chemical vapor deposition

Published:2006-08-15 Issue:4 Volume:100 Page:044106
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim Jaehyun,Yong Kijung

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2234823

Reference28 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Scaling limits of hafnium–silicate films for gate-dielectric applications

3. Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films

4. Characterization of hafnium silicate thin films grown by MOCVD using a new combination of precursors

5. Atomic layer deposition of thin hafnium oxide films using a carbon free precursor

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