Hydrogen induced positive charge generation in gate oxides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1384860
Reference37 articles.
1. Elimination and Generation of Si ‐ SiO2 Interface Traps by Low Temperature Hydrogen Annealing
2. Post-irradiation behavior of the interface state density and the trapped positive charge
3. Mechanism for the generation of interface state precursors
4. Trap creation in silicon dioxide produced by hot electrons
5. Identification of an interface defect generated by hot electrons in SiO2
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