Rapid thermal anneal induced effects in polycrystalline silicon gate structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98695
Reference5 articles.
1. Junction leakage studies in rapid thermal annealed diodes
2. Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
3. Barrier heights at the polycrystalline silicon‐SiO2interface
4. Dependence of the work-function difference between the polysilicon gate and silicon substrate on the doping level in polysilicon
5. Effects of Rapid Thermal Processing on Thermal Oxides of Silicon
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