Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3360199
Reference19 articles.
1. Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes
2. Local structure of luminescent InGaN alloys
3. Theoretical study of phase separation in wurtzite InGaN
4. Comparative cathodoluminescence characterization of ultrathin InN wells/GaN matrix MQWs grown on bulk-GaN and MOVPE-GaN
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