Eu luminescence center created by Mg codoping in Eu-doped GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4704920
Reference11 articles.
1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
2. Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
3. Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium
4. Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection
5. Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy
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