Borosilicate glass films for InP encapsulation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92373
Reference12 articles.
1. Ion‐implantedn‐ andp‐type layers in InP
2. p‐njunction diodes in InP and In1−xGaxAsyP1−yfabricated by beryllium‐ion implantation
3. Planar guarded avalanche diodes in InP fabricated by ion implantation
4. GaInAsP/InP avalanche photodiodes
5. High avalanche gain in small‐area InP photodiodes
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ta-Si-N and Si3N4 Encapsulants for InP;MRS Proceedings;1992
2. Ceramics in microelectronics;Ceramics International;1987-01
3. Al2O3 as an antireflection coating for InP/InGaAsP LEDs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1983
4. Thin film encapsulants for annealing GaAs and InP;Thin Solid Films;1983-01
5. Annealing encapsulants for InP I: Auger electron and secondary ion mass spectrometric studies;Thin Solid Films;1982-08
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