Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt–Ti–SiO2–Si wafer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1394903
Reference18 articles.
1. Low-temperature electronic properties of a normal conducting perovskite oxide (LaNiO3)
2. Electronic properties of the metallic perovskiteLaNiO3: Correlated behavior of 3delectrons
3. Metal-insulator transition in oxygen-deficientLaNiO3−xperovskites
4. Nitrogen dependence of the GaAsN interband critical points E1 and E1+Δ1 determined by spectroscopic ellipsometry
5. Optical properties of PbZrxTi1−xO3 on platinized silicon by infrared spectroscopic ellipsometry
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1. Effect of strain on the optical properties of LaNiO3: A first-principle study;Computational Materials Science;2016-02
2. Effects of LaNiO3 buffer layers on preferential orientation growth and properties of PbTiO3 thin films;Ceramics International;2008-05
3. Preparation of LaNiO3 thin films with very low room-temperature electrical resistivity by room temperature sputtering and high oxygen-pressure processing;Thin Solid Films;2008-01
4. Preparation and Properties of Highly Oriented LaNiO3Thin Films on Different Substrates;Ferroelectrics;2007-09-28
5. Correlation between electrical and ellipsometric properties on high-quality epitaxial thin films of the conductive oxide LaNiO3 on STO (001);Journal of Applied Physics;2007-09-15
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