Extraction of slow oxide trap concentration profiles in metal–oxide–semiconductor transistors using the charge pumping method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference13 articles.
1. Charge pumping in MOS devices
2. A reliable approach to charge-pumping measurements in MOS transistors
3. Stress-induced oxide leakage
4. D. Bauza and G. Ghibaudo, Solid-State Electron. (accepted for publication).
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