Front surface field formation for majority carriers by functional p-NiO layer employed Si solar cell-Reference-Cited by-同舟云学术

Front surface field formation for majority carriers by functional p-NiO layer employed Si solar cell

Published:2016-09-26 Issue:13 Volume:109 Page:133902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Patel Dipal B.¹,Kim Hong-Sik¹,Patel Malkeshkumar¹,Chauhan Khushbu R.¹,Park Jeong Eun²,Lim Donggun²,Kim Joondong¹

Affiliation:

1. Photoelectric and Energy Device Application Lab (PEDAL) and Department of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon 406772, South Korea

2. Department of IT Convergence, Korea National University of Transportation, 50 Daehak-ro, Chungju, Chungbuk 380702, South Korea

Funder

National Research Foundation of Korea (NRF)

Incheon National University (INU)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4963259

Reference24 articles.

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4. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

5. Surface passivation of crystalline silicon solar cells: a review

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