E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy-Reference-Cited by-同舟云学术

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E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy

Published:2013-01-21 Issue:3 Volume:102 Page:032104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Koizumi A.,Markevich V. P.,Iwamoto N.,Sasaki S.,Ohshima T.,Kojima K.,Kimoto T.,Uchida K.,Nozaki S.,Hamilton B.,Peaker A. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4788814

Reference23 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. New materials for radiation hard semiconductor dectectors

3. Defect energy levels in electron-irradiated and deuterium-implanted6Hsilicon carbide

4. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

5. Major deep levels with the same microstructures observed in n-type 4H–SiC and 6H–SiC

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1. Defect engineering using microwave processing in SiC and GaAs;Semiconductor Science and Technology;2022-05-23

2. Characterization methods for defects and devices in silicon carbide;Journal of Applied Physics;2022-04-14

3. Directly Confirming the Z 1/2 Center as the Electron Trap in SiC Through Accessing the Nonradiative Recombination;physica status solidi (RRL) – Rapid Research Letters;2021-11-14

4. Characterisation of negative-U defects in semiconductors;Journal of Physics: Condensed Matter;2020-05-13

5. Application of graphene vertical field effect to regulation of organic light-emitting transistors*;Chinese Physics B;2020-05-01

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