Anomalous phosphorus diffusion in Si during post-implantation annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1379359
Reference10 articles.
1. Boron redistribution in arsenic‐implanted silicon and short‐channel effects in metal–oxide–semiconductor field effect transistors
2. Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion
3. The Influence of Amorphizing Implants on Boron Diffusion in Silicon
4. Low-temperature annealing of arsenic/phosphorus junctions
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1. Tungsten diffusion in silicon;Journal of Applied Physics;2014-01-07
2. Arsenic and phosphorus codiffusion during silicon microelectronic processes;Thin Solid Films;2010-06
3. The Impact of Boron Halo on Phosphorus Junction Formation and Stability;Electrochemical and Solid-State Letters;2008
4. Transient Dose Loss of Phosphorus during Postimplantation Annealing at 800 °C;Japanese Journal of Applied Physics;2007-07-04
5. Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface;Applied Physics Letters;2005-02-21
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