Strengthening TiN diffusion barriers for Cu metallization by lightly doping Al
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2056583
Reference26 articles.
1. Reactively sputtered TiN as a diffusion barrier between Cu and Si
2. The effect of density and microstructure on the performance of TiN barrier films in Cu metallization
3. Mechanical characterization of reactively magnetron-sputtered TiN films
4. Grain boundary diffusion of Cu in TiN film by X-ray photoelectron spectroscopy
5. Oxidation behavior of (Ti1 − xAlx)N films perpared by r.f. reactive sputtering
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4. A new Cu(TiBN x ) alloy film for boosting the per-watt illuminance of high power LEDs;Japanese Journal of Applied Physics;2016-12-12
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