Transmission electron microscopy study of CdTe(111) grown on GaAs(100) by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344971
Reference5 articles.
1. Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100)
2. Elimination of dark line defects in lattice‐mismatched epilayers through use of strained‐layer superlattices
3. OPTICAL IMAGING OF DISLOCATIONS IN STRAINED—LAYER SUPERLATTICES AND LATTICE—MISMATCHED EPILAYERS
4. CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterization
5. High resolution electron microscope study of epitaxial CdTe‐GaAs interfaces
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Defects in wide band gap II-VI crystals;Materials Science and Engineering: R: Reports;1997-11
2. Epitaxial electrodeposition of CdTe films on InP from aqueous solutions: Role of a chemically deposited CdS intermediate layer;Applied Physics Letters;1995-10-16
3. Unusual strain caused by the twin boundary structure in CdTe(1̄1̄1̄) films;Applied Surface Science;1993-03
4. Crystallographic HREM studies of small CdTe crystallites;Ultramicroscopy;1993-02
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