Spectroscopic charge pumping in Si nanowire transistors with a high-κ/metal gate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3368122
Reference16 articles.
1. Proceedings of Sixth IEEE Conference on Nanotechnology;Ferry D.,2006
2. Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity
3. Charge pumping in MOS devices
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