Characteristics of photoacoustic displacement for silicon damaged by ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360241
Reference21 articles.
1. Depth distribution of secondary defects in 2‐MeV boron‐implanted silicon
2. Damage nucleation and annealing in MeV ion‐implanted Si
3. Raman-scattering depth profile of the structure of ion-implanted GaAs
4. Detection of thermal waves through optical reflectance
5. Photothermal reflectance investigation of processed silicon. II. Signal generation and lattice temperature dependence in ion‐implanted and amorphous thin layers
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1. Defect Mapping of Metal Contaminated Si Wafers by a Laser Heterodyne Photothermal Displacement Method;2022 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR);2022-07-31
2. Development of laser heterodyne photothermal displacement method for mapping carrier nonradiative recombination centers in semiconductors;Journal of Applied Physics;2022-05-21
3. Improvement in Surface Grinding Damage in Silicon Wafers by Chemical Spin Etching;ECS Journal of Solid State Science and Technology;2014
4. Influence of defects on the formation of thin porous GaP(001) films;Crystallography Reports;2003-09
5. Photothermal reflectance investigation of ion implanted 6H–SiC;Applied Physics Letters;1997-11-17
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