Heavily Si‐doped GaAs grown by low‐pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106645
Reference23 articles.
1. Use of tertiarybutylarsine for GaAs growth
2. Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs
3. GaAs growth using tertiarybutylarsine and trimethylgallium
4. Magnetophotoluminescence characterization of residual donors in GaAs grown by metalorganic chemical vapor deposition
5. Metalorganic chemical vapor deposition of high‐purity GaAs using tertiarybutylarsine
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