Vacancy production by 3 MeV electron irradiation in 6H-SiC studied by positron lifetime spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365630
Reference33 articles.
1. Silicon carbide (SiC)—Recent results in physics and in technology
2. Point defects in silicon carbide
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5. Photoluminescence of Radiation Defects in Ion-Implanted6HSiC
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