Dislocation baskets in thick InxGa1−xN epilayers
Author:
Affiliation:
1. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA
2. PhotoNitride Devices, Inc., 7700 S. River Parkway, Tempe, Arizona 85284, USA
Funder
National Science Foundation
Advanced Research Projects Agency - Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5042079
Reference26 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
2. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
4. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
5. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
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