Radio‐frequency bias effects on SiO2films deposited by distributed electron cyclotron resonance plasma enhanced chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357705
Reference22 articles.
1. Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma
2. Thickness dependence of the dielectric behavior of SiO2 films fabricated by microwave electron cyclotron resonance plasmas
3. Effects of substrate temperature on the electrical and physical properties of silicon dioxide films deposited from electron cyclotron resonant microwave plasmas
4. Electrical properties of distributed electron cyclotron resonance plasma‐deposited SiO2‐InP diodes
5. Device Quality SiO2Deposited by Distributed Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition without Substrate Heating
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1. Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study;Nanoscale;2020
2. Effects of radio-frequency bias on silicon oxide films deposited by dual electron cyclotron resonance-radio frequency hybrid plasma;Acta Physica Sinica;2010
3. Low-Temperature SiO[sub 2] Layers Deposited by Combination of ECR Plasma and Supersonic Silane/Helium Jet;Journal of The Electrochemical Society;2008
4. Effect of the ion bombardment energy on silicon dioxide films deposited from oxygen/tetraethoxysilane plasmas in a helicon reactor;Thin Solid Films;2005-01
5. Physical and electrical properties of low temperature (<100 °C) SiO2 films deposited by electron cyclotron resonance plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2003-05
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