Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics-Reference-Cited by-同舟云学术

Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics

Published:2018-04-14 Issue:14 Volume:123 Page:145701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Teii Kungen¹,Kawamoto Shinsuke¹,Fukui Shingo¹,Matsumoto Seiichiro¹²

Affiliation:

1. Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

2. Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

Funder

Cabinet Office, Government of Japan

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5007429

Reference35 articles.

1. Wide-bandgap semiconductor materials: For their full bloom

2. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal