Low-temperature direct bonding of SiC and Ga2O3 substrates under atmospheric conditions-Reference-Cited by-同舟云学术

Low-temperature direct bonding of SiC and Ga2O3 substrates under atmospheric conditions

Published:2021-08-28 Issue:8 Volume:130 Page:085303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Matsumae Takashi¹^ORCID,Kurashima Yuichi¹^ORCID,Takagi Hideki¹^ORCID,Umezawa Hitoshi²^ORCID,Higurashi Eiji¹^ORCID

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST), Device Technology Research Institute, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan

2. National Institute of Advanced Industrial Science and Technology (AIST), Advanced Power Electronics Research Center (ADPERC), 1-8-31 Midoriokai, Ikeda, Osaka 563-8577, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0057960

Reference26 articles.

1. Thermodynamic Studies of β-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

2. Direct wafer bonding of Ga2O3–SiC at room temperature

3. Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3–SiC Interfaces

4. Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

5. Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions

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