TYPE CONVERSION AND p‐n JUNCTION FORMATION IN LITHIUM‐ION‐IMPLANTED ZnSe
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653580
Reference9 articles.
1. PHOSPHOROUS‐ION‐IMPLANTED CdS
2. HIGH CONDUCTIVITY p‐TYPE CdS
3. PHOTOELECTRONIC PROPERTIES OF ION‐IMPLANTED CdS
4. TYPE CONVERSION AND p‐n JUNCTIONS IN n‐CdTe PRODUCED BY ION IMPLANTATION
5. TYPE CONVERSION ANDp‐nJUNCTION FORMATION IN ION‐IMPLANTED ZnTe
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1. Investigations on implantation doping of wide-bandgap II-VI compounds using radioactive dopants;Journal of Physics D: Applied Physics;1999-01-01
2. Anomalous ion damage behavior in ZnSe;Applied Physics Letters;1996-09-30
3. Surface preparation of ZnSe by chemical methods;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-11
4. High dose Cl implantation in ZnSe: Impurity incorporation and radiation damage;Journal of Applied Physics;1994-02
5. Implanted widegap II–VI materials for electro-optic applications and electron-beam-pumped devices;Widegap II–VI Compounds for Opto-electronic Applications;1992
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