Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures-Reference-Cited by-同舟云学术

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Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures

Published:2016-02 Issue:2 Volume:6 Page:025120
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Tong Jinchao¹,Xie Yiyang¹,Xu Zhengji¹,Qiu Shupeng¹,Ni Peinan¹,Tobing Landobasa Y. M.¹,Zhang Dao-Hua¹

Affiliation:

1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore

Funder

The Ministry of Education, Singapore

Agency for Science, Technology and Research (A*STAR)

Economic Development Board - Singapore (EDB)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4942936

Reference26 articles.

1. Electrical characteristics of InAsSb/GaSb heterojunctions

2. Backside‐illuminated InAsSb/GaSb broadband detectors

3. Long‐wavelength InAsSb photoconductors operated at near room temperatures (200–300 K)

4. Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates

5. Infrared Detectors

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dark Current Analysis of InAsSb-Based Hetero-$p{\text{-}}i{\text{-}}n$ Mid-Infrared Photodiode;IEEE Journal of Quantum Electronics;2020-02

2. Asymmetric Split H-Shape Resonator Array for Enhancement of Midwave Infrared Photodetection;IEEE Journal of Quantum Electronics;2019-12

3. Localized surface plasmon enhanced infrared photodetectors for uncooled imaging systems;Image Sensing Technologies: Materials, Devices, Systems, and Applications VI;2019-05-13

4. Surface plasmon enhanced infrared photodetection;Opto-Electronic Advances;2019

5. Monolithically Integrated InAsSb-Based nBnBn Heterostructure on GaAs for Infrared Detection;IEEE Journal of Selected Topics in Quantum Electronics;2018-11

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