Two‐dimensional simulation study of field‐effect operation in undoped poly‐Si thin‐film transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360554
Reference25 articles.
1. Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid‐phase crystallization: Theory, experiments, and thin‐film transistor applications
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4. Numerical simulation of polycrystalline-Silicon MOSFET's
5. Two-Dimensional Device Simulation for Polycrystalline Silicon Thin-Film Transistor
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2. An Explicit Analytical Solution to the Grain Boundary Barrier Height in Undoped Polycrystalline Semiconductor Thin-Film Transistors;IEEE Transactions on Electron Devices;2014-06
3. An Analytical Subthreshold Model of Polycrystalline Silicon Thin-Film Transistors Based on Meyer-Neldel Rule;IEEE Transactions on Electron Devices;2014-03
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