Temperature dependence of photoluminescence from Mg‐doped In0.5Ga0.5P grown by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349425
Reference15 articles.
1. Materials for light emitting diodes
2. The fabrication of single heterojunction AlGaAs/InGaP electroluminescent diodes
3. Liquid phase epitaxial growth of GaInP/AlGaAs double heterostructures for visible lasers
4. Growth and characterization of single‐heterostructure AlGaAs/InGaP red light‐emitting diodes by liquid‐phase epitaxy
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