Origin of electrical signals for plasma etching endpoint detection
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3662973
Reference14 articles.
1. Applying RF current harmonics for end-point detection during etching multi-layered substrates and cleaning discharge chambers with NF3 discharge
2. Determination of SF6 reactive ion etching end point of the SiO2/Si system by plasma impedance monitoring
3. Sensitive End-Point Detection for Dielectric Etch
4. End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring
5. Reactive ion etching end‐point determination by plasma impedance monitoring
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