Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1807962
Reference7 articles.
1. Dislocation effect on light emission efficiency in gallium nitride
2. Epitaxial Lateral Overgrowth of GaN
3. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
4. Electrical characterization of GaN p-n junctions with and without threading dislocations
5. Plan-view image contrast of dislocations in GaN
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1. The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template;Journal of Microscopy;2017-10-08
2. Reprint of: Electron channelling contrast imaging for III-nitride thin film structures;Materials Science in Semiconductor Processing;2016-11
3. Electron channelling contrast imaging for III-nitride thin film structures;Materials Science in Semiconductor Processing;2016-06
4. Prospects of III-nitride optoelectronics grown on Si;Reports on Progress in Physics;2013-10-01
5. Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope;Applied Physics Letters;2013-04-08
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