Solution-based electrical doping of organic photovoltaics with non-fullerene acceptors facilitated by solvent vapor pre-treatment

Author:

Chang Yi-Chien1ORCID,Larrain Felipe A.12ORCID,Fuentes-Hernandez Canek13ORCID,Park Youngrak1ORCID,Kippelen Bernard1ORCID

Affiliation:

1. Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , Atlanta, Georgia 30332, USA

2. Faculty of Engineering and Sciences, Universidad Adolfo Ibáñez 2 , Santiago 7941169, Chile

3. Department of Electrical and Computer Engineering, Northeastern University 3 , Boston, Massachusetts 02115, USA

Abstract

Solution-based electrical doping of organic semiconductors using 12-molybdophosphoric acid (PMA) hydrate has been shown to allow p-type doping of conjugated polymers over a limited depth from the surface, enabling the fabrication of organic solar cells with a simplified device architecture. However, the doping level of certain conjugated polymers using PMA was found to be limited by the polymer film volume. Here, we report a modified PMA doping technique based on film volume expansion that is applicable to device fabrication, leading to hole-collecting layer-free non-fullerene organic photovoltaic devices, which exhibit a comparable photovoltaic performance to those with a commonly evaporated MoO3 hole-collecting layer.

Funder

National Nuclear Security Administration

Publisher

AIP Publishing

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