Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1−xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging-Reference-Cited by-同舟云学术

Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1−xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging

Published:2015-03 Issue:3 Volume:3 Page:036108
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Wood A. W.¹,Guan Y.²,Forghani K.²,Anand A.²,Kuech T. F.²^ORCID,Babcock S. E.¹

Affiliation:

1. Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

2. Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

Funder

University of Wisconsin Materials Science Research and Engineering Center

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/aplmater/3/3/1.4915301.pdf?itemId=/content/aip/journal/aplmater/3/3/10.1063/1.4915301&mimeType=pdf&containerItemId=content/aip/journal/aplmater

Reference18 articles.

1. Band gap of GaAs1−xBix, 0

2. Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix

3. Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs

4. Analysis of the GaAs/GaAsBi Material System for Heterojunction Bipolar Transistors

5. Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures

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