Switching dependence on fabrication accuracy of tapered ends of a single giant magnetoresistance memory cell in word disturb condition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370218
Reference4 articles.
1. The effect of end and edge shape on the performance of pseudo-spin valve memories
2. Micromagnetic principles in pseudo spin valve memory element design
3. Single-domain model for pseudo spin valve MRAM cells
4. Spin-valve RAM cell
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