Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2217104
Reference37 articles.
1. Wafer-bonded semiconductors using In/Sn and Cu/Ti metallic interlayers
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5. Wafer-bonded semiconductors using In/Sn and Cu/Ti metallic interlayers
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1. InP quantum dots for dislocation-tolerant, visible light emitters on Si;Applied Physics Letters;2020-11-02
2. Thermal Analysis of Si/GaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses;Advances in Materials Science and Engineering;2017
3. Relaxation of Thermal Stress in Direct Bonding by Partitioning the Bonding Area for Fabrication of Optical Isolator with Semiconductor Guiding Layer;Japanese Journal of Applied Physics;2009-11-20
4. Surface diffusion of Si, Ge and C adatoms on Si (001) substrate studied by the molecular dynamics simulation;Chinese Physics B;2009-09-29
5. Production of broadband modal gain spectra in asymmetric multiple quantum-well Ga0.47In0.53As/Ga0.18In0.82As0.4P0.6heterostructures;Quantum Electronics;2008-11-30
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