The growth of magnetic Fe overlayers on sulphur passivated GaAs(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference18 articles.
1. Interface chemistry of metal‐GaAs Schottky‐barrier contacts
2. Simultaneous epitaxy and substrate out-diffusion at a metal-semiconductor interface: Fe/GaAs(001)-c(8×2)
3. Properties of Fe single‐crystal films grown on (100)GaAs by molecular‐beam epitaxy
4. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
5. S‐passivated InP (100)‐(1×1) surface prepared by a wet chemical process
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1. Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy;Journal of Applied Physics;2006-02
2. Magnetic anisotropy of thin Fe films on GaAs;Europhysics Letters (EPL);2005-12
3. Structural and magnetic properties of ultrathin epitaxial Fe films on GaAs(001) and related semiconductor substrates;Advances in Physics;2005-03
4. Anisotropy of epitaxial Fe films grown onn-type GaAs by electrodeposition;Journal of Applied Physics;2004-06
5. Interface bonding versus strain-induced magnetic anisotropy in epitaxial Fe/semiconductor structures;Physical Review B;2003-01-15
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