Strong quantum-confined Stark effect from light hole related direct-gap transitions in Ge quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4805004
Reference29 articles.
1. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
2. Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures
3. Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition
4. Device Requirements for Optical Interconnects to Silicon Chips
5. 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator
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1. An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors;IEEE Photonics Journal;2022-10
2. Design and simulation of waveguide-integrated Ge/SiGe quantum-confined Stark effect optical modulator based on adiabatic coupling with SiGe waveguide;AIP Advances;2021-03-01
3. Promising modulation of self-assembled Ge-rich QDs by ultra-heavy phosphorus doping;Nanoscale;2020
4. Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects;Photonics;2019-03-01
5. An array of SiGe nanodisks with Ge quantum dots on bulk Si substrates demonstrating a unique light–matter interaction associated with dual coupling;Nanoscale;2019
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