Selectively Se‐doped AlGaAs/GaAs heterostructures with reducedDX‐center concentrations grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346387
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4. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
5. Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System -- a Novel Short Period AlAs/n-GaAs Superlattice --
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1. MOVPE growth of Si-doped GaAs and AlxGa1−xAs using tertiarybutylarsine (TBA) in pure N2 ambient;Materials Science in Semiconductor Processing;2003-08
2. Sulfur diffusion into GaAs/Ga 0.7 Al 0.3 As heterostructures for device applications;Applied Physics A: Materials Science & Processing;1998-11-01
3. Tellurium‐doped Al0.43Ga0.57As/(In0.2)GaAs modulation doped heterostructures by molecular‐beam‐epitaxy;Applied Physics Letters;1995-02-13
4. Selenium doping of GalnP by atomic layer epitaxy;Journal of Electronic Materials;1995-02
5. AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application;Journal of Applied Physics;1993-08
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