Nonpolar 4H-AlN grown on 4H-SiC (11¯00) with reduced stacking fault density realized by persistent layer-by-layer growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2976559
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5. Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers
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1. Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(112¯0);Applied Physics Letters;2018-01
2. Nanostructural and electronic properties of polytypes in InN nanocolumns;Journal of Applied Physics;2013-08-21
3. Anomalously low Ga incorporation in high Al-content AlGaN grown on $(11{\bar {2}}0)$ non-polar plane by molecular beam epitaxy;physica status solidi (a);2011-06-03
4. Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1\bar100);Applied Physics Express;2010-04-23
5. Stress influence on band-edge luminescence properties of 4H-AlN;Applied Physics Letters;2009-09-21
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