Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2976551
Reference14 articles.
1. Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes
2. InSb∕AlInSb quantum-well light-emitting diodes
3. Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes
4. Increase in midwave infrared light emitting diode light output due to substrate thinning and texturing
5. Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared
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2. Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers;Journal of Crystal Growth;2022-05
3. A physical model of multi-quantum well material applied in the mid-infrared detector;The European Physical Journal Special Topics;2022-03-05
4. Cascaded InGaSb quantum dot mid-infrared LEDs;Journal of Applied Physics;2022-01-31
5. Internal quantum efficiency in 6.1 Å superlattices of 77% for mid-wave infrared emitters;Applied Physics Letters;2020-08-10
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