Magnetoelectric write and read operations in a stress-mediated multiferroic memory cell-Reference-Cited by-同舟云学术

Magnetoelectric write and read operations in a stress-mediated multiferroic memory cell

Published:2017-05-29 Issue:22 Volume:110 Page:222401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Klimov Alexey¹²³,Tiercelin Nicolas²^ORCID,Dusch Yannick²,Giordano Stefano²,Mathurin Théo²,Pernod Philippe²,Preobrazhensky Vladimir²⁴,Churbanov Anton¹⁵^ORCID,Nikitov Sergei¹⁵

Affiliation:

1. Joint International Laboratory LIA LICS: V. A. Kotel'nikov Institute of Radioeng. and Electronics (IRE RAS), ul. Mokhovaya 11/7, Moscow 125009, Russia

2. Joint International Laboratory LIA LICS: University Lille, CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520 - IEMN, F-59000 Lille, France

3. Joint International Laboratory LIA LICS: Moscow Technological University (MIREA) Vernadsky Avenue 78, Moscow 119454, Russia

4. Joint International Laboratory LIA LICS: Wave Research Center, A.M.Prokhorov GPI, RAS, ul. Vavilova 38, Moscow 119991, Russia

5. Moscow Institute of Physics and Technology, Dolgoprudny, Institutskiy lane, 9, 141700, Russia

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4983717

Reference35 articles.

1. ITRS, http://www.itrs.net/Links/2013ITRS/2013Chapters/2013ERD.pdf for “ Emerging research devices,” Technical Report, The International Technology Roadmap for Semiconductors, 2013.

2. A review of emerging non-volatile memory (NVM) technologies and applications

3. After Hard Drives—What Comes Next?

4. Toward a Universal Memory

5. A new spin on magnetic memories

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon Oxide-based CBRAM Memory and Neuromorphic Properties;Advanced Memory Technology;2023-10-09

2. A magnetoelectric memory device based on pseudo-magnetization;Journal of Applied Physics;2023-07-18

3. Acoustic Control of Polarization in a Spintronic THz Emitter;Physics of Wave Phenomena;2022-08

4. Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures;Chinese Physics B;2022-08-01

5. Composite Multiferroic Terahertz Emitter: Polarization Control via an Electric Field;Physical Review Applied;2022-04-13