Anomalous capacitance‐voltage behavior due to dopant segregation and carrier trapping in As‐implanted polycrystalline silicon and silicided polycrystalline silicon gates-Reference-Cited by-同舟云学术

Anomalous capacitance‐voltage behavior due to dopant segregation and carrier trapping in As‐implanted polycrystalline silicon and silicided polycrystalline silicon gates

Published:1990-06-04 Issue:23 Volume:56 Page:2325-2327
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park K.,Batra S.,Lin J.,Yoganathan S.,Banerjee S.,Lee J.,Sun S.,Yeargain J.,Lux G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.102908

Reference5 articles.

1. Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology

2. The electrical properties of polycrystalline silicon films

3. Dopant segregation in polycrystalline silicon

4. Effects of ion-beam mixing on the performance and reliability of devices with self-aligned silicide structure

5. Dopant redistribution in silicide–silicon and silicide–polycrystalline silicon bilayered structures

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