Influence of the grain structure on the Fermi level in polycrystalline silicon: A quantum size effect?
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98482
Reference10 articles.
1. Dependence of the work-function difference between the polysilicon gate and silicon substrate on the doping level in polysilicon
2. Influence of a resistive sublayer at the polysilicon/silicon dioxide interface on MOS properties
3. Effect of impurities on the grain growth of chemical vapor deposited polycrystalline silicon films
4. Energy-band distortion in highly doped silicon
5. Impurity concentration dependent density of states and resulting fermi level for silicon
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