Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells-Reference-Cited by-同舟云学术

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Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells

Published:2013-12-09 Issue:24 Volume:103 Page:241104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Farrell R. M.,Al-Heji A. A.,Neufeld C. J.,Chen X.,Iza M.,Cruz S. C.,Keller S.,Nakamura S.,DenBaars S. P.,Mishra U. K.,Speck J. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4844955

Reference39 articles.

1. Solar cell efficiency tables (version 41)

2. Progress and challenges for next-generation high-efficiency multijunction solar cells

3. Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices

4. Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method

5. Unusual properties of the fundamental band gap of InN

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1. V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis;IEEE Transactions on Electron Devices;2024-03

2. Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate: Analysis of the influence of growth temperature;Sensors and Actuators A: Physical;2021-11

3. Indium‐rich InGaN/GaN solar cells with improved performance due to plasmonic and dielectric nanogratings;Energy Science & Engineering;2019-09-14

4. Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications;Applied Surface Science;2019-05

5. Role of V-pits in the performance improvement of InGaN solar cells;Applied Physics Letters;2016-09-26

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