Design and growth of short-period long wavelength infrared InAsSb/InAsSb superlattices on lattice engineered metamorphic buffers-Reference-Cited by-同舟云学术

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Design and growth of short-period long wavelength infrared InAsSb/InAsSb superlattices on lattice engineered metamorphic buffers

Published:2020-07-28 Issue:4 Volume:128 Page:044507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Haugan H. J.¹^ORCID,Ciani A. J.²^ORCID,Grein C. H.³^ORCID,Mahalingam K.¹^ORCID

Affiliation:

1. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433, USA

2. Sivananthan Laboratories, Inc., 590 Territorial Drive Ste H, Bolingbrook, Illinois 60440, USA

3. Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, USA

Funder

Air Force Research Laboratory

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0010468

Reference35 articles.

1. A new semiconductor superlattice

2. Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices

3. Effects of energy gap and band structure on free‐carrier nonlinear susceptibilities in semiconductors

4. Minority carrier lifetimes in ideal InGaSb/InAs superlattices

5. Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of 6.2 Å semiconductor topological materials on lattice engineered virtual substrates;Infrared Sensors, Devices, and Applications XIII;2023-10-10

2. Optimization of hybridized InAsSb/InGaSb semiconductor topological materials;Applied Physics Letters;2022-08-08

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